Process of forming a pattern on a substrate

ABSTRACT

A process for forming an inorganic material layer pattern on a substrate. The process includes the steps of transferring an inorganic powder dispersed paste layer supported on a support film to the surface of the substrate to form the inorganic powder dispersed paste layer on the substrate; forming a resist film on the inorganic powder dispersed paste layer transferred to the surface of the substrate; exposing the resist film to light through a mask to form a latent image of a resist pattern; developing the exposed resist film to form the resist pattern; etching exposed portions of the inorganic powder dispersed paste layer to form an inorganic powder dispersed paste layer pattern corresponding to the resist pattern; and baking the pattern to form an inorganic material layer pattern.

DETAILED DESCRIPTION OF THE INVENTION

The present invention relates to a process for forming an inorganicmaterial layer pattern on a substrate and, more specifically, to apattern formation process suitable for the production of a plasmadisplay panel, which enables the formation of a very fine pattern for apanel material forming each display cell of a plasma display panel andwhich can substantially improve workability using a transfer filmcompared with the process of the prior art.

Of flat panel display technologies, a plasma display panel (PDP)attracts much attention because its production process is easy though itis a large-sized panel and it has a wide view angle and is of a selflight emission type with high display quality. Particularly, a colorplasma display panel is expected to become the main stream of the marketas a display device for 20-inch or more wall TVs in the future.

A color PDP can display colors by irradiating a fluorescent materialwith ultraviolet light generated by gas discharge. Generally speaking,the color PDP has a constitution such that fluorescent sites foremitting red color, fluorescent sites for emitting green color andfluorescent sites for emitting blue color are formed on a substrate sothat light emitting display cells for respective colors are uniformlyexistent over the entire panel. Specifically, barriers ribs made from aninsulating material are provided on the surface of a substrate made fromglass or the like, many display cells are defined by the barrier ribs,and the inside of each display cell serves as a plasma function space.Each fluorescent site is formed in this plasma function space and anelectrode for causing plasma to act on the fluorescent site is providedat this fluorescent site, whereby a plasma display panel comprisingdisplay cells as display units is formed.

FIG. 1 show an example of the structure of an AC type PDP. A pair ofmaintenance electrodes 6A are formed in the form of stripes on a frontside substrate glass 1, a dielectric layer 3 covers the maintenanceelectrodes 6A and a MgO film 3A as a protective film is vapor-depositedon the dielectric layer 3. In FIG. 1, reference numeral 10 denotes buslines.

To improve the contrast of the plasma display panel, red, green and bluecolors filters and a black matrix (not shown) may be provided under thedielectric layer.

On a rear side substrate glass 2, signal electrodes 6B are formed in theform of stripes, barrier ribs 5 are provided between adjacent signalelectrodes, and a fluorescent layer 4 is formed on the side and bottomof each of the barrier ribs 5.

The front side substrate and the rear side substrate are joined togetherand sealed in such a manner that the maintenance electrodes of the frontside substrate and the signal electrodes of the rear side substratecross each other at right angles, and a mixed gas of neon and xenon isintroduced into the inside.

FIG. 2 shows an example of the structure of a DC type PDP. Cathodeelectrodes 6 a are formed in the form of stripes on the front sidesubstrate glass 1.

On a rear side glass substrate, the electrode terminals and leads 6b′and 6 c′of display anodes 6 b and auxiliary anodes 6 c are formed, anda resistor 7 is further provided between the anode terminal and theanode lead and between the auxiliary anode terminal and the auxiliaryanode lead. The rear substrate is insulated with a dielectric 3excluding the display anode terminals and the auxiliary anode terminals.Thereafter, to define a discharge space, barrier ribs 5 are provided inthe form of a lattice and a fluorescent layer 4 is formed on the sideand bottom excluding the anode terminal of each barrier rib. In FIG. 2,the reference numeral 8 denotes a display cell and the reference numeral9 denotes an auxiliary cell.

The front side substrate and the rear side substrate are joined togetherand sealed in such a manner that the cathode 6 a of the front sidesubstrate and the display anode 6 b and the auxiliary anode 6 c of therear side substrate cross each other at right angles, and a mixed gas ofneon and xenon is introduced into the inside.

As a process for forming a pattern for panel materials such as thebarrier ribs, electrodes, resistors, fluorescent materials, colorfilters and black matrix of the above plasma display panel, there areknown (1) a screen-printing process which comprises screen-printing anon-photosensitive inorganic powder dispersed paste composition on asubstrate to form a pattern and baking it; (2) a photolithography whichcomprises forming a photosensitive inorganic powder dispersed pastecomposition film on a substrate, exposing the film to ultraviolet lightthrough a photomask, developing the exposed film to form a pattern onthe substrate and baking it; and the like.

However, in the above screen printing process, the requirement for thepositioning accuracy of a pattern is becoming more and more severe alongwith an increase in the size of a panel and a reduction in patternwidth, and general printing cannot satisfy the requirement.

Also, in the above photolithography, the sensitivity in a depthdirection of an inorganic powder dispersed paste layer is unsatisfactoryand a very fine pattern with sharp edges cannot be always obtained whena 10 to 100 μm-thick film pattern is to be formed with a one time ofexposure and development.

It is an object of the present invention to provide a novel process forforming an inorganic material layer pattern on a substrate.

It is another object of the present invention to provide a process forforming a pattern suitable for the production of a plasma display panel.

It is still another object of the present invention to provide a processfor forming a pattern having high dimensional accuracy.

It is a further object of the present invention to provide a process forforming a pattern, which can substantially improve workability and hasexcellent production efficiency as compared with the process of theprior art.

It is a still further object of the present invention to provide atransfer film having an inorganic powder dispersed paste layer forforming the above inorganic material layer, which is advantageously usedto carry out the process of the present invention.

Other objects and advantages of the present invention will becomeapparent from the following description.

According to the present invention, firstly, the above objects andadvantages of the present invention can be attained by a process forforming an inorganic material layer pattern on a substrate (to bereferred to as “the first process of the invention”), which comprisesthe steps:

(1) transferring an inorganic powder dispersed paste layer supported ona support film to the surface of the substrate to form the inorganicpowder dispersed paste layer on the substrate;

(2) forming a resist film on the inorganic powder dispersed paste layertransferred to the surface of the substrate;

(3) exposing the resist film to light through a mask to form a latentimage of a resist pattern;

(4) developing the exposed resist film to form the resist pattern;

(5) etching exposed portions of the inorganic powder dispersed pastelayer to form an inorganic powder dispersed paste layer patterncorresponding to the resist pattern; and

(6) baking the pattern to form an inorganic material layer pattern.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a sectional view of a general AC type PDP;

FIG. 2 is a sectional view of a general DC type PDP;

FIG. 3 is a sectional view showing the production process of a plasmadisplay panel according to an embodiment of the present invention in theorder of its steps; and

FIG. 4 is a sectional view showing the subsequent steps after the stepsof FIG. 3 of the production process according to the embodiment of thepresent invention.

The process of the present invention consists of steps (1) to (6).

That is, the process of the present invention consists of (1) the stepof transferring an inorganic powder dispersed paste layer, (2) the stepof forming a resist film, (3) the step of exposing the resist film, (4)the step of developing the resist film, (5), the step of etching theinorganic powder dispersed paste layer, and (6) the step of baking theinorganic powder dispersed paste layer pattern.

Each step will be described with reference to the accompanying drawings.

<Step of Transferring Inorganic Powder Dispersed Paste Layer>

In the step (1), an inorganic powder dispersed paste layer supported ona support film is transferred to the surface of a substrate to form theinorganic powder dispersed paste layer on the substrate. The inorganicpowder dispersed paste layer is formed not by coating an inorganicpowder dispersed paste composition in which inorganic powder isdispersed, such as a composition for forming barrier ribs or acomposition for forming electrodes, directly on a substrate havingrigidity a by transferring the above paste layer supported on thesupport film having flexibility. The paste composition can be coated onthe support film with a roll coater or the like, thereby making itpossible to form an inorganic powder dispersed paste layer having alarge thickness (for example, 10 μm±1 μm) and excellent uniformity inthickness on the support film. The inorganic powder dispersed pastelayer can be formed without fail by the simple operation of transferringthe thus formed inorganic powder dispersed paste layer to the surface ofthe substrate en bloc. Therefore, according to the process of thepresent invention, the step of forming an inorganic powder dispersedpaste layer can be improved (increase in efficiency) and the quality ofthe formed pattern can be also improved (increase in the fineness ofpattern).

FIG. 3 and FIG. 4 are schematic sectional views showing one example ofthe steps of forming an inorganic powder dispersed paste layer in theproduction process of the present invention. In FIG. 3(a), referencenumeral 11 denotes a glass substrate.

The production process of the present invention has significantcharacteristics in that a transfer film is used to transfer theinorganic powder dispersed paste layer forming the transfer film to thesurface of the substrate.

The transfer film comprises a support film and an inorganic powderdispersed paste layer formed on the support film, and a protective filmlayer may be formed on the surface of the inorganic powder dispersedpaste layer. The constitution of the transfer film will be describedhereinafter.

An example of the transfer step is as follows. After the protective filmlayer of the transfer film used as required is removed, the transferfilm 20 is placed on the surface of the glass substrate 11 in such amanner that the surface of the inorganic powder dispersed paste layer 21comes in contact with the surface of the substrate 11, as shown in FIG.3(b), and thermally pressed by a heating roller, and then the supportfilm 22 is removed from the inorganic powder dispersed paste layer 21.Thereby, the inorganic powder dispersed paste layer 21 is transferredand closely adhered to the surface of the glass substrate 11 as shown inFIG. 3(c). When the inorganic powder dispersed paste layer pattern isused to form electrodes, a reflection reducing film may be formedbetween the glass substrate and the inorganic powder dispersed pastelayer, and when the inorganic powder dispersed paste layer pattern isused to form barrier ribs, a reflection reducing film may be formed onthe inorganic powder dispersed paste layer (that is, between the layerand a resist film which will be described later). Although thereflection reducing film may be formed by a prior art process such asscreen printing or the like, a transfer film having a laminate filmconsisting of the inorganic powder dispersed paste layer and thereflection reducing film is preferably used.

Transfer conditions include a heating roller surface temperature of 80to 140° C., a heating roll pressure of 1 to 5 kg/cm², and a heating rollmoving speed of 0.1 to 10.0 m/min. The glass substrate may be preheatedat 40 to 100° C., for example.

In the production process of the present invention, it is preferred totransfer and form on the substrate a laminate consisting of a pluralityof inorganic powder dispersed paste layers which differ in solubility inan etching solution.

By etching this laminate, anisotropy in a depth direction of etching isproduced, thereby making it possible to form a material layer residualportion having a preferred rectangular section or section close to arectangular shape.

The number (n) of inorganic powder dispersed paste layers to belaminated together is generally 2 to 10, preferably 2 to 5.

To form a laminate consisting of an n number of inorganic powderdispersed paste layers, (1) an inorganic powder dispersed paste layer(single layer) formed on the support film is transferred an n number oftimes, or (2) a laminate consisting of an n number of inorganic powderdispersed paste layers is transferred en bloc. The method (2) ispreferred from the viewpoint of simplifying the transfer step.

<Step of Forming Resist Film>

In this step (2), as shown in FIG. 3(d), a resist film 31 is formed onthe surface of the transferred inorganic powder dispersed paste layer21. A resist forming this resist film 31 may be either positive ornegative type. The composition of the resist will be describedhereinafter.

The resist film 31 can be formed by coating a resist by screen printing,roll coating, rotation coating, cast coating or the like and drying thecoated film.

The resist film formed on the support film may be transferred to thesurface of the inorganic powder dispersed paste layer 21. According tothis formation method, the step of forming a resist film can be improved(increase in efficiency) and the thickness uniformity of the formedinorganic powder pattern can also be improved.

The thickness of the resist film 31 is generally 0.1 to 40 μm,preferably 0.5 to 20 μm.

<Step of Exposing Resist Film>

In this step (3), as shown in FIG. 3(e), the surface of the resist film31 formed on the inorganic powder dispersed paste layer 21 isselectively exposed to radiation such as ultraviolet radiation throughan exposure mask M to form a latent image of a resist pattern. In thefigure, MA and MB denote light transmitting portions and light shieldingportions of the exposure mask M, respectively.

A radiation irradiating device is not particularly limited and may be anultraviolet irradiating device used in the above photolithography or anexposure device used to produce semiconductors and liquid crystaldisplay devices.

<Step of Developing Resist Film>

In this step (4), the exposed resist film is developed to form a resistpattern (latent image).

As development conditions, there can be suitably selected a type,composition and concentration of a developer, developing time,developing temperature, developing method (such as immersion, rocking,shower, spray or puddling method) and a developing device, according tothe type of the resist film 31.

By this development step, a resist pattern 35 consisting of resistremaining portions 35A and resist removed portions 35B is formed(pattern corresponding to the exposure mask M) as shown in FIG. 4(f).

This resist pattern 35 serves as an etching mask in the subsequent step(etching step) and a material forming the resist remaining portions 35A(photo-cured resist) must have a lower dissolution speed in an etchingsolution than a material forming the inorganic powder dispersed pastelayer 21.

<Step of Etching Inorganic Powder Dispersed Paste Layer>

In this step (5), the inorganic powder dispersed paste layer is etchedto form an inorganic powder dispersed paste layer pattern correspondingto the resist pattern.

That is, as shown in FIG. 4(g), portions corresponding to the resistremoved portions 35B of the resist pattern 35 of the inorganic powderdispersed paste layer 21 are dissolved in the etching solution andselectively removed. FIG. 4(g) shows a state that the inorganic powderdispersed paste layer is being etched.

When etching is continued, as shown in FIG. 4(h), the surface of theglass substrate is exposed at the portions corresponding to the resistremoved portions of the inorganic powder dispersed paste layer 21.Thereby, an inorganic powder dispersed paste layer pattern 25 consistingof material layer remaining portions 25A and material layer removedportions 25B is formed.

As etching conditions, there can be suitably selected a type,composition and concentration of the etching solution, treatment time,treatment temperature, treatment method (such as immersion, rocking,shower, spray or puddling treatment) and a treatment device according tothe type of the inorganic powder dispersed paste layer 21.

The types of the resist film 31 and the inorganic powder dispersed pastelayer 21 are selected so that a solution similar to the developer usedin the developing step can be used as the etching solution, therebymaking it possible to carry out the developing step and the etching stepcontinuously with the result of improved production efficiency due tothe simplification of the process.

It is preferred that the resist remaining portions 35A forming theresist pattern 35 should be dissolved gradually by etching andcompletely removed when the inorganic powder dispersed paste layerpattern 25 is formed (when etching is completed).

Even when part or all of the resist remaining portions 35A remain afteretching, the resist remaining portions 35 a are removed in thesubsequent baking step.

<Step of Baking Inorganic Powder Dispersed Paste Layer Pattern>

In this step (6), the inorganic powder dispersed paste layer pattern 25is baked. Thereby, organic substances contained in the material layerremaining portions are calcined, a metal layer or an inorganic materiallayer such as a glass layer is formed, an inorganic material layerpattern 40 is formed on the surface of the glass substrate as shown inFIG. 4(i), and a panel material 50 in which, for example, the inorganicmaterial layer is an electrode or barrier rib can be eventuallyobtained.

The baking temperature must be a temperature at which the organicsubstances contained in the material layer remaining portions 25A can beburnt, generally 400 to 600° C. The baking time is generally 10 to 90minutes.

According to the present invention, there is also provided a process forforming an inorganic material layer pattern on a substrate (to bereferred to as “the second process of the invention” hereinafter).

That is, according to the present invention, there is also provided aprocess for forming an inorganic material layer pattern on a substrate,which comprises the steps of:

(1) transferring a laminate, in which a resist film and an inorganicpowder dispersed paste layer are laminated and supported on a supportfilm in this order, to the surface of the substrate to form on thesubstrate the laminate film in which the inorganic powder dispersedpaste layer and the resist film are laminated in this order;

(2) exposing the resist film to light through a mask to form a latentimage of a resist pattern;

(3) developing the exposed resist film to form the resist pattern;

(4) etching exposed portions of the inorganic powder dispersed pastelayer to form an inorganic powder dispersed paste layer patterncorresponding to the resist pattern; and

(5) baking the pattern to form an inorganic material layer pattern.

In the above step (1), there is used the laminate film in which theresist film and the inorganic powder dispersed paste layer are laminatedand supported on the support film in this order. This laminate film isformed by forming the resist film on the support film and then formingthe inorganic powder dispersed paste layer on the resist film. To formthe resist film and the inorganic powder dispersed paste layer, a rollcoater may be used, thereby making it possible to form a laminate filmhaving excellent thickness uniformity can be formed on the support film.

The laminate film consisting of the resist film and the inorganic powderdispersed paste layer formed on the support film is transferred to thesurface of the substrate. Transfer conditions may be the same as thosein the aforementioned <step of transferring an inorganic powderdispersed paste layer> of the first process of the invention. Asdescribed in the <step of transferring an inorganic powder dispersedpaste layer>, a reflection reducing film may be formed on or under theinorganic powder dispersed paste layer. The above steps (2), (3), (4)and (5) can be carried out by the same operations as those in the <stepsof exposing a resist film, developing a resist film, etching aninorganic powder dispersed paste layer and baking an inorganic powderdispersed paste layer pattern> in the first process of the invention.

According to the above process, since the inorganic powder dispersedpaste layer and the resist film are transferred to the surface of thesubstrate en bloc, production efficiency can be further improved by thesimplification of the process.

The process of the present invention can be used not only in theformation of electrodes and barrier ribs but also in the formation of aresistor, fluorescent material, color filter or black matrix for aplasma display panel.

Materials and conditions used in each step of the process will bedescribed hereinafter.

<Substrate>

The material of the substrate is a plate-like material made from aninsulating material such as glass, silicon, polycarbonate, polyester,aromatic amide, polyamide imide or polyimide. A proper pretreatment suchas a chemical treatment with a silane coupling agent, plasma treatment,or thin film formation treatment by ion plating, sputtering, vapor phasereaction or vacuum deposition may be made on the surface of thisplate-like member.

<Transfer film>

The transfer film used in the production process of the presentinvention has a support film and an inorganic powder dispersed pastelayer formed on the support film. A protective film layer may be formedon the surface of the inorganic powder dispersed paste layer.

(1) Support Film

The support film-forming the transfer film is preferably a resin filmhaving not only heat resistance and solvent resistance but alsoflexibility. Due to the flexibility of the support film, a pastecomposition can be coated on the support film with a roll coater, andthe inorganic powder dispersed paste layer can be stored and supplied inthe form of a roll. A resin forming the support film is selected frompolyethylene terephthalate, polyester, polyethylene, polypropylene,polystyrene, polyimide, polyvinyl alcohol, polyvinyl chloride,fluorine-containing resin such as polyfluoroethylene, nylon, celluloseand the like. The thickness of the support film is, for example, 20 to100 μm.

(2) Inorganic Powder Dispersed Paste Layer

The inorganic powder dispersed paste layer forming the transfer film canbe formed by coating the support film with a pasty inorganic powderdispersed paste composition containing inorganic powder, a binding resinand a solvent as essential ingredients, such as a composition forforming electrodes or a composition for forming barrier ribs and dryingthe coated film to remove part or all of the solvent.

(3) Inorganic Powder Dispersed Paste Composition

The inorganic powder dispersed paste composition used to form thetransfer film is a pasty composition containing (a) inorganic powder,(b) a binder and (c) a solvent.

(a) Inorganic Powder

The inorganic powder used in the inorganic powder dispersed pastecomposition of the present invention differs depending on the type of amaterial to be formed.

Inorganic powder used in a composition for forming electrodes includesconductive powder such as Ag, Au, Al, Ni, Ag—Pd alloy, Cu and Cr.

Inorganic powder used in a composition for forming barrier ribs includeslow-melting glass frit. Illustrative examples of the inorganic powderinclude (1) a mixture of zinc oxide, boron oxide and silicon oxide(ZnO—B₂O₃—SiO₂ series), (2) a mixture of lead oxide, boron oxide andsilicon oxide (PbO—B₂O₃—SiO₂ series), (3) a mixture of lead oxide, boronoxide, silicon oxide and aluminum oxide (PbO—B₂O₃—SiO₂—Al₂O₃ series),(4) a mixture of lead oxide, zinc oxide, boron oxide and silicon oxide(PbO—ZnO—B₂O₃—SiO₂series) and the like.

These inorganic powder dispersed paste compositions can be used as acomposition for forming a resistor, fluorescent material, color filteror black matrix by changing the type of the inorganic powder.

Inorganic powder used in a composition for forming a resistor includesRuO₂ and the like.

Inorganic powder used in a composition for forming a fluorescentmaterial includes Y₂O₃:Eu³⁺, Y₂SiO₅:Eu³⁺, Y₃Al₅O₁₂:Eu³⁺, YVO₄:Eu³⁺,(Y,Gd)BO₃:Eu³⁺, Zn₃(PO₄)₂:Mn and the like for red color, Zn₂SiO₄:Mn,BaAl₁₂O₁₉:Mn, BaMgAl₁₄O₂₃:Mn, LaPO₄:(Ce,Tb), Y₃(Al,Ga)₅O₁₂:Tb and thelike for green color, and Y₂SiO₅:Ce, BaMgAl₁₀O₁₇:Eu²⁺, BaMgAl₁₄O₂₃:Eu²⁺,(Ca,Sr,Ba)₁₀(PO₄)₆C₁₂:Eu²⁺, (Zn,Cd)S:Ag and the like for blue color.

Inorganic powder used in a composition for forming a color filterincludes Fe₂O₃, Pb₃O₄ and the like for red color, Cr₂O₃ and the like forgreen color, and 2(Al₂Na₂Si₃O₁₀).Na₂S₄) and the like for blue color.

Inorganic powder used in a composition for forming a black matrixincludes Mn, Fe, Cr and the like.

According to the present invention, the inorganic powder dispersed pastelayer is a paste layer in which conductive inorganic powder is dispersedand the formation of electrodes on a substrate for a plasma displaypanel which are the inorganic material layer pattern formed in the abovebaking step can be carried out advantageously, or the inorganic powderdispersed paste layer is a paste layer in which glass powder isdispersed and the formation of barrier ribs on a substrate for a plasmadisplay panel which are the inorganic material layer pattern formed inthe baking step can be carried out advantageously.

When the electrodes are formed, a paste composition comprising (a-1)conductive powder, (b) an alkali-soluble resin and (c) a solvent ispreferably used as the conductive inorganic powder dispersed paste layerand when the barrier ribs are formed, a paste composition comprising(a-2) glass frit, (b) an alkali-soluble resin and (c) a solvent ispreferably used as the glass powder dispersed paste layer.

(b) binder

As the binder used in the inorganic powder dispersed paste compositionof the present invention may be used various resins. A binder comprising30 to 100 wt % of an alkali-soluble resin is particularly preferred.

The term “alkali-soluble” used herein means the property of dissolvingin an alkaline etching solution which will be described hereinafter andbeing soluble to such an extent that the intended etching can be carriedout.

The alkali-soluble resin used in the binder preferably has a surfacetension polar item value of its surface tension of 5 to 20 dyn/cm.

A resin having a surface tension polar item value of the surface tensionof less than 5 dyn/cm may show hydrophobic nature and loweredwettability (affinity) for inorganic powder having a hydrophilicsurface. When this resin is used, it is difficult to prepare acomposition having excellent dispersion stability of inorganic powderand film defects may occur in a film-forming material layer formed ofthe composition.

On the other hand, a resin having a surface tension polar item value ofthe surface tension of more than 20 dyn/cm shows high hydrophilic natureand it is difficult to coat an inorganic powder dispersed pastecomposition containing this resin on a support film having a hydrophobicsurface (such as a PET film subjected to a release treatment).

An inorganic powder dispersed paste composition obtained by controllingthe surface tension polar item value of the surface tension of thealkali-soluble resin to 5 to 20 dyn/cm has both dispersion stability ofinorganic powder and excellent coating properties for the support film.

The surface tension polar item of the surface tension of thealkali-soluble resin can be controlled by changing the type and contentof a monomer contained in the resin.

The surface tension (surface tension polar item and dispersion item) ofthe alkali-soluble resin is preferably in the range of 30 to 50 dyn/cm.

Illustrative examples of the alkali-soluble resin include (meth)acrylicresins, hydroxystyrene resins, novolak resins, polyester resins and thelike.

Of these alkali-soluble resins, copolymers of the following monomers (a)and monomers (b) and copolymers of monomers (a), monomers (b) andmonomers (c) are particularly preferred.

Monomers (a)

alkali-soluble functional group-containing monomers as typified bycarboxyl group-containing monomers such as acrylic acid, methacrylicacid, maleic acid, fumaric acid, crotonic acid, itaconic acid,citraconic acid, mesaconic acid and cinammic acid; hydroxylgroup-containing monomers such as 2-hydroxyethyl (meth)acrylate,2-hydroxypropyl (meth)acrylate and 3-hydroxypropyl (meth)acrylate;phenolic hydroxyl group-containing monomers such as o-hydroxystyrene,m-hydroxystyrene and p-hydroxystyrene; and the like.

Monomers (b)

monomers copolymerizable with monomers (a) as typified by (meth)acrylicacid esters other than the monomers (a) such as methyl (meth)acrylate,ethyl (meth)acrylate, butyl (meth)acrylate, benzyl (meth)acrylate,glycidyl (meth)acrylate and dicyclopentanyl (meth)acrylate; aromaticvinyl monomers such as styrene and α-methylstyrene; conjugated dienessuch as butadiene and isoprene; and the like.

Monomers (c)

macromonomers typified by macromonomers having a polymerizableunsaturated group such as (meth)acryloyl group at one terminal of apolymer chain, such as polystyrene, methyl poly(meth)acrylate, ethylpoly(meth)acrylate and benzyl poly(meth)acrylate.

The content of the binder in the inorganic powder dispersed pastecomposition is generally 1 to 50 parts by weight, preferably 1 to 40parts by weight, based on 100 parts by weight of inorganic powder.

(c) Solvent

The solvent constituting the inorganic powder dispersed pastecomposition is contained to provide appropriate fluidity or plasticityand good film-forming properties to the inorganic powder dispersed pastecomposition.

The solvent constituting the inorganic powder dispersed pastecomposition is not particularly limited and exemplified by ethers,esters, ether esters, ketones, ketone esters, amides, amide esters,lactams, lactones, sulfoxides, sulfones, hydrocarbons, hydrocarbonhalides and the like.

The preferable solvent is required to have (1) a normal boiling point(boiling point at 1 atm) of 100 to 200° C., preferably 110 to 180° C.,and (2) a vapor pressure at 20° C. of 0.5 to 50 mmHg, preferably 0.7 to30 mmHg.

When the normal boiling point is higher than 200° C., the boiling pointof the whole solvent contained becomes too high, and when the inorganicpowder dispersed paste composition containing this solvent is coated toform a transfer film, an organic solvent remains in the film-formingmaterial layer of the obtained transfer film in large quantities withthe result that a blocking phenomenon is liable to occur when thetransfer film is kept in the rolled form. On the other hand, when thenormal boiling point is lower than 100° C., the boiling point of thewhole solvent becomes too low, agglomerates of the inorganic powder areliable to be formed in the inorganic powder dispersed paste compositioncontaining this solvent with the result that film defects such ascoating stripes, craters and pin holes are liable to be produced in thefilm-forming material layer formed by coating the composition.

When the vapor pressure is lower than 0.5 mmHg, the vapor pressure ofthe whole solvent becomes too low, and when the inorganic powderdispersed paste composition containing this solvent is coated to form atransfer film, an organic solvent remains in the film-forming materiallayer of the obtained transfer film in large quantities with the resultthat a blocking phenomenon is liable to occur when the transfer film iskept in the rolled form. On the other hand, when the vapor pressure ishigher than 50 mmHg, the vapor pressure of the whole solvent becomes toohigh, and the inorganic powder dispersed paste composition containingthis solvent has quick drying property and poor uniformity in thicknessdue to insufficient leveling property at the time of coating.

Illustrative examples of the solvent include tetrahydrofuran, anisole,dioxane, ethylene glycol monoalkyl ethers, diethylene glycol dialkylethers, propylene glycol monoalkyl ethers, propylene glycol dialkylethers, acetic acid esters, hydroxy acetic acid esters, alkoxy aceticacid esters, propionic acid esters, hydroxypropionic acid esters,alkoxypropionic acid esters, lactic acid esters, ethylene glycolmonoalkyl ether acetates, propylene glycol monoalkyl ether acetates,alkoxyacetic acid esters, cyclic ketones, non-cyclic ketones,acetoacetic acid esters, pyruvic acid esters, N,N-dialkylformamides,N,N-dialkylacetamides, N-alkylpyrrolidones, γ-lactones,dialkylsulfoxides, dialkylsulfones, terpineol, N-methyl-2-pyrrolidoneand the like. They may be used alone or in combination of two or more.

The content of the solvent in the inorganic powder dispersed pastecomposition can be suitably selected from a range where goodfilm-forming property (fluidity or plasticity) can be obtained.

The inorganic powder dispersed paste composition may contain otheradditives such as a dispersant, plasticizer, development promotingagent, adhesion aid, halation preventing agent, storage stabilizer,anti-foaming agent, antioxidant, ultraviolet absorber, filler,low-melting glass and the like, as optional component(s).

Particularly, an inorganic powder dispersed paste composition forforming electrodes may contain fatty acid as a dispersant for the aboveconductive powder. Preferred examples of the fatty acid includesaturated fatty acids such as octanoic acid, undecylic acid, lauricacid, myristic acid, palmitic acid, pentadecanoic acid, stearic acid andarachic acid; and unsaturated fatty acids such as elaidic acid, oleicacid, linoleic acid, linolenic acid and arachidonic acid. They may beused alone or in combination of two or more. The content of the fattyacid in the inorganic powder dispersed paste composition is preferably10 parts or less by weight based on 100 parts by weight of the inorganicpowder.

The preferred method for coating the inorganic powder dispersed pastecomposition on the support film must be capable of forming a coated filmhaving excellent uniformity in thickness and a large thickness (forexample, 10 μm or more) efficiently, as exemplified by coating with aroll coater, doctor blade, curtain coater, wire coater and the like.

The surface to be coated with the inorganic powder dispersed pastecomposition of the support film is preferably subjected to a releasetreatment. Thereby, the support film can be removed easily in thetransfer step which will be described hereinafter.

Coated film drying conditions are, for example, a coating temperature of50 to 150° C. and a coating time of 0.5 to 30 minutes, and the retentionof the solvent after drying (content of the solvent in the inorganicpowder dispersed paste layer) is generally 2 wt % or less.

The thickness of the inorganic powder dispersed paste layer thus formedon the support film is generally 10 to 100 μm, though it differsdepending on the content of the inorganic powder and the type and sizeof a material.

The protective film layer which may be formed on the surface of theinorganic powder dispersed paste layer is a polyethylene film, polyvinylalcohol film or the like.

The following transfer films advantageously used for producing a plasmadisplay panel by the process of the present invention are novel per seand provided by the present invention:

(i) a transfer film for forming electrodes that has a conductive powderdispersed paste layer formed of a paste composition having (a-1)conductive powder, (b) an alkali-soluble resin and (c) a solvent on thesupport film.

(ii) a transfer film for forming electrodes that has a laminate in whicha resist film and a conductive powder dispersed paste layer, which isformed of a paste composition comprising (a-1) conductive powder, (b) analkali-soluble resin and (c) a solvent, are laminated on the supportfilm in this order.

(iii) a transfer film for forming electrodes that has a laminate inwhich a resist film, a conductive powder dispersed paste layer formed ofa paste composition comprising (a-1) conductive powder, (b) analkali-soluble resin and (c) a solvent, and a reflection reducing filmare laminated on the support film in this order.

(iv) a transfer film for forming barrier ribs that has a glass powderdispersed paste layer formed of a paste composition having (a-2) glassfrit, (b) an alkali-soluble resin and (c) a solvent on the support film.

(v) a transfer film for forming barrier ribs that has a laminate inwhich a resist film and a glass powder dispersed paste layer, which isformed of a paste composition comprising (a-2) glass frit, (b) analkali-soluble resin and (c) a solvent, are laminated on the supportfilm in this order.

<Resist Film (Resist Composition)>

In the production process of the present invention, a resist film isformed on the inorganic powder dispersed paste layer transferred to thesurface of the substrate, and exposed and developed to form a resistpattern on the inorganic powder dispersed paste layer.

A resist composition used to form the resist film is selected from (1)an alkali development type radiation sensitive resist composition, (2)an organic solvent development type radiation sensitive resistcomposition, (3) an aqueous development type radiation sensitive resistcomposition, and the like. These resist compositions will be describedhereinafter.

(1) Alkali Development Type Radiation Sensitive Resist Composition

The alkali development type radiation sensitive resist compositioncontains an alkali-soluble resin and a radiation sensitive component asessential ingredients.

Illustrative examples of the alkali-soluble resin constituting thealkali development type radiation sensitive resist composition are thesame as those listed for the alkali-soluble resin forming the bindercomponent of the inorganic powder dispersed paste composition.

Preferred examples of the radiation sensitive component constituting thealkali development type radiation sensitive resist composition include(1) a combination of a polyfunctional monomer and a photopolymerizationinitiator, (2) a combination of a melamine resin and an opticallyacid-generating agent which form an acid when exposed to radiation, andthe like. Of combinations (1), a combination of a polyfunctional(meth)acrylate and a photopolymerization initiator is particularlypreferred.

Illustrative examples of the polyfunctional (meth)acrylate forming theradiation sensitive component include di(meth)acrylates of alkyleneglycol such as ethylene glycol and propylene glycol; di(meth)acrylatesof polyalkylene glycol such as polyethylene glycol and polypropyleneglycol; di(meth)acrylates of polymers having hydroxyl groups at bothterminals such as both terminal hydroxypolybutadiene, both terminalhydroxypolyisoprene and both terminal hydroxypolycaprolactone;poly(meth)acrylates of polyhydric alcohols having 3 or more hydroxylgroups such as glycerin, 1,2,4-butanetriol, trimethylol alkane,tetramethylol alkane and dipentaerythritol; poly(meth)acrylates ofpolyalkylene glycol adducts of polyhydric alcohols having 3 or morehydroxyl groups; poly(meth)acrylates of cyclic polyols such as1,4-cyclohexanediol and 1,4-benzenediol; oligo(meth)acrylates such aspolyester (meth)acrylate, epoxy (meth)acrylate, urethane (meth)acrylate,alkyd resin (meth)acrylate, silicone resin (meth)acrylate and spiranresin (meth)acrylate; and the like. They may be used alone or incombination of two or more.

Illustrative examples of the photopolymerization initiator forming theradiation sensitive component include carbonyl compounds such as benzyl,benzoin, benzophenone, camphorquinone,2-hydroxy-2-methyl-1-phenylpropan-1-one, 1-hydroxycyclohexylphenylketone, 2,2-dimethoxy-2-phenylacetophenone,2-methyl-[4′-(methylthio)phenyl]-2-morpholino-1-propanone and2-benzyl-2-dimethylamino-1-(4-morpholinophenyl)butan-1-one; azocompounds such as azoisobutyronitrile and azide compounds such as4-azidobenzaldehyde; organic sulfur compounds such as mercaptandisulfide; organic peroxides such as benzoyl peroxide, di-tert-butylperoxide, tert-butyl hydroperoxide, cumene hydroperoxide and paramethanehydroperoxide; trihalomethanes such as1,3-bis(trichloromethyl)-5-(2′-chlorophenyl)-1,3,5-triazine and2-[2-(2-furanyl)ethylenyl]-4,6-bis(trichloromethyl)-1,3,5-triazine;imidazole dimers such as 2,2′-bis(2-chlorophenyl)4,5,4′,5′-tetraphenyl-1,2′-biimidazole; and the like. They may be used alone orin combination of two or more.

The content of the radiation sensitive component in the alkalidevelopment type radiation sensitive resist composition is generally 1to 300 parts by weight, preferably 10 to 200 parts by weight, based on100 parts by weight of the alkali-soluble resin.

To provide good film-forming property, an organic solvent is properlycontained in the alkali development type radiation sensitive resistcomposition. Illustrative examples of the organic solvent are the sameas those listed for the solvent forming the inorganic powder dispersedpaste composition.

(2) Organic Solvent Development Type Radiation Sensitive ResistComposition

The organic solvent development type radiation sensitive resistcomposition contains an azido compound and at least one member selectedfrom the group consisting of natural rubber, synthetic rubber andcyclized rubber obtained by cyclizing these as essential ingredients.

Illustrative examples of the azido compound forming the organic solventdevelopment type radiation sensitive resist composition include4,4′-diazidobenzophenone, 4,4′-diazidodiphenyl methane,4,4′-diazidostilbene, 4,4′-diazidochalcone, 4,4′-diazidobenzalacetone,2,6-di(4′-azidobenzal)cyclohexanone,2,6-di(4′-azidobenzal)-4-methylcyclohexanone and the like. These may beused alone or in combination of two or more.

To provide good film-forming property, an organic solvent is generallycontained in the organic solvent development type radiation sensitiveresist composition. Illustrative examples of the organic solvent are thesame as those listed for the solvent forming the inorganic powderdispersed paste composition.

(3) Aqueous Development Type Radiation Sensitive Resist Composition

The aqueous development type radiation sensitive resist compositioncontains a water-soluble resin such as polyvinyl alcohol and at leastone member selected from the group consisting of diazonium compounds andbichromic acid compounds as essential ingredients.

The resist composition used in the production process of the presentinvention may contain other additives such as a development promotingagent, adhesion aid, halation preventing agent, storage stabilizer,anti-foaming agent, antioxidant, ultraviolet absorber, filler,fluorescent material, pigment and dye, as optional component(s).

<Exposure Mask>

The exposure pattern of the exposure mask M used in the step of exposinga resist film, which differs depending on materials, is generally astripe pattern having a stripe width of 10 to 500 μm.

<Developer>

The developer used in the step of developing a resist film can besuitably selected according to the type of a resist film (resistcomposition). Stated more specifically, an alkali developer can be usedfor a resist film formed from an alkali development type radiationsensitive resist composition, an organic solvent developer for a resistfilm formed from an organic solvent development type radiation sensitiveresist composition and an aqueous developer for a resist film formedfrom an aqueous development type radiation sensitive resist composition.

The effective component of the alkali developer is an alkaline inorganiccompound such as lithium hydroxide, sodium hydroxide, potassiumhydroxide, sodium hydrogen phosphate, diammonium hydrogen phosphate,dipotassium hydrogen phosphate, disodium hydrogen phosphate, ammoniumdihydrogen phosphate, potassium dihydrogen phosphate, sodium dihydrogenphosphate, lithium silicate, sodium silicate, potassium silicate,lithium carbonate, sodium carbonate, potassium carbonate, lithiumborate, sodium borate, potassium borate, ammonia or the like; and analkaline organic compound such as tetramethyl ammonium hydroxide,trimethyl hydroxyethyl ammonium hydroxide, monomethylamine,dimethylamine, trimethylamine, monoethylamine, diethylamine,triethylamine, monoisopropylamine, diisopropylamine, ethanolamine or thelike.

The alkali developer used in the step of developing a resist film can beprepared by dissolving one or more of the above alkaline compounds inwater. The concentration of the alkaline compound in the alkalideveloper is generally 0.001 to 10 wt %, preferably 0.01 to 5 wt %.After development with the alkali developer, washing with water isgenerally carried out.

Illustrative examples of the organic solvent developer include organicsolvents such as toluene, xylene and butyl acetate. They may be usedalone or in combination of two or more. After development with anorganic solvent developer, rinsing with a poor solvent is carried out asrequired.

Illustrative examples of the aqueous developer include water, alcoholand the like.

<Etching Solution>

The etching solution used in the step of etching an inorganic powderdispersed paste layer is preferably an alkaline solution. Thereby, thealkali-soluble resin contained in the inorganic powder dispersed pastelayer can be dissolved and removed easily.

Since the inorganic powder contained in the inorganic powder dispersedpaste layer are uniformly dispersed in the alkali-soluble resin, thealkali-soluble resin which is a binder is dissolved in an alkalinesolution and washed, whereby the inorganic powder is removed at the sametime.

The alkaline solution used as an etching solution may be a solutionhaving the same composition as the developer.

When the etching solution has the same composition as the alkalideveloper used in the development step, the development step and theetching step can be carried out continuously with the result of improvedproduction efficiency due to the simplification of the process.

After etching with an alkaline solution, washing with water is generallycarried out.

As the etching solution may also be used an organic solvent capable ofdissolving the binder of the inorganic powder dispersed paste layer.Illustrative examples of the organic solvent are the same as thoselisted for the solvent forming the inorganic powder dispersed pastecomposition.

After etching with an organic solvent, rinsing with a poor solvent iscarried out as required.

The following examples are provided for the purpose of furtherillustrating the present invention but are in no way to be taken aslimiting. In the following examples, “parts” and “%” mean “parts byweight” and “% by weight (wt %)”, respectively.

The weight average molecular weight (Mw) is an average molecular weightin terms of styrene measured by gel permeation chromatography (GPC)(trade name: HLC-802A of Tosoh Corporation).

Synthesis Example 1

A monomer composition comprising 200 parts of N-methyl-2-pyrrolidone, 70parts of n-butyl methacrylate, 30 parts of methacrylic acid and 1 partof azobisisobutyronitrile was charged into an autoclave equipped with astirrer, stirred uniformly at room temperature in a nitrogen atmosphereand polymerized at 80° C. for 3 hours. The polymerization reaction wasfurther continued at 100° C. for 1 hour, and the temperature was thenreduced to room temperature to give a polymer solution. Thepolymerization conversion was 98% and the weight average molecularweight (Mw) of a copolymer (to be referred to as “polymer (A)”hereinafter) separated out from the polymer solution was 70,000.

Synthesis Example 2

A polymer solution was obtained in the same manner as in SynthesisExample 1 except that a monomer composition comprising 200 parts ofN-methyl-2-pyrrolidone, 80 parts of n-butyl methacrylate, 20 parts ofmethacrylic acid and 1 part of azobisisobutyronitrile was charged intoan autoclave. The polymerization conversion was 97% and the weightaverage molecular weight (Mw) of a copolymer (to be referred to as“polymer (B)” hereinafter) separated out from the polymer solution was100,000.

Synthesis Example 3

A polymer solution was obtained in the same manner as in SynthesisExample 1 except that a monomer composition comprising 200 parts ofN-methyl-2-pyrrolidone, 90 parts of n-butyl methacrylate, 10 parts ofmethacrylic acid and 1 part of azobisisobutyronitrile was charged intoan autoclave. The polymerization conversion was 97% and the weightaverage molecular weight (Mw) of a copolymer (to be referred to as“polymer (C)” hereinafter) separated out from the polymer solution was90,000.

Synthesis Example 4

A polymer solution was obtained in the same manner as in SynthesisExample 1 except that a monomer composition comprising 200 parts ofethyl 3-ethoxypropionate, 85 parts of n-butyl methacrylate, 15 parts ofmethacrylic acid and 1 part of azobisisobutyronitrile was charged intoan autoclave. The polymerization conversion was 98% and the weightaverage molecular weight (Mw) of a copolymer (to be referred to as“polymer (D)” hereinafter) separated out from the polymer solution was50,000.

Preparation Example 1

(Formation of Transfer Film for Forming Electrodes)

750 Parts by silver powder as inorganic powder, 150 parts of the polymer(A) as an alkali-soluble resin, 20 parts of polypropylene glycol[molecular weight of 400, manufactured by Wako Pure Chemical Industries,Ltd.] as a plasticizer an 400 parts of N-methyl-2-pyrrolidone as asolvent were kneaded together to prepare an inorganic powder dispersedpaste composition for forming electrodes [to be referred to as“inorganic powder dispersed paste composition (I-1)” hereinafter].

Thereafter, the obtained inorganic powder dispersed paste composition(I-1) was coated on a polyethylene terephthalate (PET) support film (awidth of 200 mm, a length of 30 m and a thickness of 38 μm) that hadbeen subjected to a release treatment with a roll coater to form acoated film. The formed coated film was dried at 110° C. for 5 minutesto remove the solvent completely, whereby a transfer film [to bereferred to as “transfer film (I-1)” hereinafter] having a 10 μm-thickinorganic powder dispersed paste layer for forming electrodes [to bereferred to as “inorganic powder dispersed paste layer (I-1)”hereinafter] formed on the support film was prepared.

Preparation Example 2

(Formation of Transfer Film for Forming Electrodes)

750 Parts by silver powder as inorganic powder, 150 parts of the polymer(B) as an alkali-soluble resin, 20 parts of polypropylene glycol[molecular weight of 400, manufactured by Wako Pure Chemical Industries,Ltd.] as a plasticizer and 400 parts of N-methyl-2-pyrrolidone as asolvent were kneaded together to prepare an inorganic powder dispersedpaste composition for forming electrodes [to be referred to as“inorganic powder dispersed paste composition (I-2)” hereinafter].

A transfer film [to be referred to as “transfer film (I-2)” hereinafter]having a 10 μm-thick inorganic powder dispersed paste layer for formingelectrodes [to be referred to as “inorganic powder dispersed paste layer(I-2)” hereinafter] formed on the support film was prepared by coatingthe inorganic powder dispersed paste composition and removing thesolvent completely in the same manner as in Preparation Example 1 exceptthat the obtained inorganic powder dispersed paste composition (I-2) wasused.

Preparation Example 3

(Formation of Transfer Film for Forming Barrier Ribs)

750 Parts of lead borosilicate glass frit (PbO—B₂O₃—SiO₂-series mixture,softening point: 540° C., this shall be applied to the followingdescription) as inorganic powder, 150 parts of the polymer (A) as analkali-soluble resin, 20 parts of polypropylene glycol [molecular weightof 400, manufactured by Wako Pure Chemical Industries, Ltd.] as aplasticizer and 400 parts of N-methyl-2-pyrrolidone as a solvent werekneaded together to prepare an inorganic powder dispersed pastecomposition for forming barrier ribs [to be referred to as “inorganicpowder dispersed paste composition (II-1)” hereinafter].

A transfer film [to be referred to as “transfer film (II-1)”hereinafter] having a 40 μm-thick inorganic powder dispersed paste layerfor forming barrier ribs [to be referred to as “inorganic powderdispersed paste layer (II-1)” hereinafter] formed on the support filmwas prepared by coating the inorganic powder dispersed paste compositionand removing the solvent completely in the same manner as in PreparationExample 1 except that the obtained inorganic powder dispersed pastecomposition (II-1) was used.

Preparation Example 4

(Formation of Transfer Film for Forming Barrier Ribs)

1,000 Parts of lead borosilicate glass frit as inorganic powder, 150parts of the polymer (B) as an alkali-soluble resin, 20 parts ofpolypropylene glycol [molecular weight of 400, manufactured by Wako PureChemical Industries, Ltd.] as a plasticizer and 400 parts ofN-methyl-2-pyrrolidone as a solvent were kneaded together to prepare aninorganic powder dispersed paste composition for forming barrier ribs[to be referred to as “inorganic powder dispersed paste composition(II-2)” hereinafter].

A transfer film [to be referred to as “transfer film (II-2)”hereinafter] having a 40 μm-thick inorganic powder dispersed paste layerfor forming barrier ribs [to be referred to as “inorganic powderdispersed paste layer (II-2)” hereinafter] formed on the support filmwas prepared by coating the inorganic powder dispersed paste compositionand removing the solvent completely in the same manner as in PreparationExample 1 except that the obtained inorganic powder dispersed pastecomposition (II-2) was used.

Preparation Example 5

(Formation of Transfer Film for Forming Barrier Ribs)

750 Parts of lead borosilicate glass frit as inorganic powder, 150 partsof the polymer (B) as an alkali-soluble resin, 20 parts of polypropyleneglycol [molecular weight of 400, manufactured by Wako Pure ChemicalIndustries, Ltd.] as a plasticizer and 400 parts ofN-methyl-2-pyrrolidone as a solvent were kneaded together to prepare aninorganic powder dispersed paste composition for forming barrier ribs[to be referred to as “inorganic powder dispersed paste composition(II-3)” hereinafter].

A transfer film [to be referred to as “transfer film (II-3)”hereinafter] having a 40 μm-thick inorganic powder dispersed paste layerfor forming barrier ribs [to be referred to as “inorganic powderdispersed paste layer (II-3)” hereinafter] formed on the support filmwas prepared by coating the inorganic powder dispersed paste compositionand removing the solvent completely in the same manner as in PreparationExample 1 except that the obtained inorganic powder dispersed pastecomposition (II-3) was used.

Preparation Example 6

(Formation of Transfer Film for Forming Barrier Ribs)

1,000 Parts of lead borosilicate glass frit as inorganic powder, 150parts of the polymer (C) as an alkali-soluble resin, 20 parts ofpolypropylene glycol [molecular weight of 400, manufactured by Wako PureChemical Industries, Ltd.] as a plasticizer and 400 parts ofN-methyl-2-pyrrolidone as a solvent were kneaded together to prepare aninorganic powder dispersed paste composition for forming barrier ribs[to be referred to as “inorganic powder dispersed paste composition(II-4)” hereinafter].

A transfer film [to be referred to as “transfer film (II-4)”hereinafter] having a 40 μm-thick inorganic powder dispersed paste layerfor forming barrier ribs [to be referred to as “inorganic powderdispersed paste layer (II-4)” hereinafter] formed on the support filmwas prepared by coating the inorganic powder dispersed paste compositionand removing the solvent completely in the same manner as in PreparationExample 1 except that the obtained inorganic powder dispersed pastecomposition (II-4) was used.

Preparation Example 7

750 Parts of lead borosilicate glass frit as inorganic powder, 150 partsof the polymer (C) as an alkali-soluble resin, 20 parts of polypropyleneglycol [molecular weight of 400, manufactured by Wako Pure ChemicalIndustries, Ltd.] as a plasticizer and 400 parts ofN-methyl-2-pyrrolidone as a solvent were kneaded together to prepare aninorganic powder dispersed paste composition for forming barrier ribs[to be referred to as “inorganic powder dispersed paste composition(II-5)” hereinafter].

A transfer film [to be referred to as “transfer film (II-5)”hereinafter] having a 40 μm-thick inorganic powder dispersed paste layerfor forming barrier ribs [to be referred to as “inorganic powderdispersed paste layer (II-5)” hereinafter] formed on the support filmwas prepared by coating the inorganic powder dispersed paste compositionand removing the solvent completely in the same manner as in PreparationExample 1 except that the obtained inorganic powder dispersed pastecomposition (II-5) was used.

Solubility of Inorganic Powder Dispersed Paste Layer for Forming BarrierRibs

The solubility of each of the inorganic powder dispersed paste layersfor forming barrier ribs (II-1) to (II-5) of the Preparation Examples 3to 7 in a 0.2 wt % aqueous solution of potassium hydroxide wasevaluated. The evaluation method is as follows, and evaluation resultsare shown in Table 1 below.

(Evaluation Method)

Each of the inorganic powder dispersed paste compositions was coated onthe surface of a soda glass substrate (5 cm square and 1.1 mm thick)with a bar coater and dried at 110° C. for 5 minutes to remove thesolvent completely to prepare a test piece having a 40 μm-thickinorganic powder dispersed paste layer.

The obtained test piece was immersed in a 0.2 wt % aqueous solution ofpotassium hydroxide and the surface of the test piece was observed whilethe solution was stirred with a magnetic stirrer. The time elapsedbefore half of the surface of the substrate was exposed by thedissolution of the inorganic powder dispersed paste layer on the surfaceof the test piece was measured as a dissolution time and the dissolutionspeed was calculated based on the following equation.

equation: dissolution speed (μm/sec)=film thickness (μm)/dissolutiontime (sec)

TABLE 1 inorganic powder film dissolution dissolution dispersedthickness time speed paste layer (μm) (sec) (μm/sec) II-1 40 30 1.33II-2 40 46 0.87 II-3 40 62 0.65 II-4 40 74 0.54 II-5 40 88 0.45

Preparation Example 8

(Formation of Transfer Film for Forming Resist Film)

50 Parts of the polymer (C) as an alkali-soluble resin, 40 parts ofpentaerythritol tetraacrylate as a polyfunctional monomer (radiationsensitive component), 5 parts of2-benzyl-2-dimethylamino-1-(4-morpholinophenyl)-butan-1-one as aphotopolymerization initiator (radiation sensitive component) and 150parts of ethyl 3-ethoxypropionate as a solvent were kneaded together toprepare an alkali development type radiation sensitive resistcomposition in the form of a paste.

A coated film was formed by coating a polyethylene terephthalate (PET)support film (a width of 200 mm, a length of 30 m and a thickness of 38μm) that had been subjected to a release treatment with the obtainedresist composition by the use of a roll coater. The formed coated filmwas dried at 110° C. for 5 minutes to remove the solvent completely,whereby a transfer film [to be referred to as “transfer film (R-1)”hereinafter] having a 5 μm-thick resist film [to be referred to as“resist film (1)” hereinafter] formed on the support film was prepared.

Preparation Example 9

(Formation of Transfer Film for Forming Resist Film)

50 Parts of the polymer (D) as an alkali-soluble resin, 40 parts ofpentaerythritol tetraacrylate as a polyfunctional monomer (radiationsensitive component), 5 parts of2-benzyl-2-dimethylamino-1-(4-morpholinophenyl)-butan-1-one as aphotopolymerization initiator (radiation sensitive component) and 150parts of ethyl 3-ethoxypropionate as a solvent were kneaded together toprepare an alkali development type radiation sensitive resistcomposition in the form of a paste.

A coated film was formed by coating a polyethylene terephthalate (PET)support film (a width of 200 mm, a length of 30 m and a thickness of 38μm) that had been subjected to a release treatment with the obtainedresist composition by the use of a roll coater. The formed coated filmwas dried at 110° C. for 5 minutes to remove the solvent completely,whereby a transfer film [to be referred to as “transfer film (R-2)”hereinafter] having a 10 μm-thick resist film [to be referred to as“resist film (2)” hereinafter] formed on the support film was prepared.

EXAMPLE 1

[Step of Transferring Inorganic Powder Dispersed Paste Layer]

The transfer film [I-1] was placed upon a glass substrate for a 6-inchpanel in such a manner that the surface of the inorganic powderdispersed paste layer (I-1) for forming electrodes came into contactwith the surface of the glass substrate, and the transfer film [I-1] waspress-bonded to the glass substrate by a heating roller. Press-bondingconditions are a heating roller surface temperature of 120° C., a rollpressure of 4 kg/cm² and a heating roller roll moving speed of 0.5m/min. After the above press-bonding treatment, the support film wasremoved from the inorganic powder dispersed paste layer (I-1). Thereby,the inorganic powder dispersed paste layer (I-1) was transferred andclosely bonded to the surface of the glass substrate. When the thicknessof this inorganic powder dispersed paste layer was measured, it was 10μm±1 μm.

Thereafter, the transfer film (I-2) was placed upon the inorganic powderdispersed paste layer (I-1) in such a manner that the surface of theinorganic powder dispersed paste layer (I-2) came into contact with thesurface of the inorganic powder dispersed paste layer (I-1), and thetransfer film (I-2) was press-bonded by a heating roller under the samepress-bonding conditions as described above. After the abovepress-bonding treatment, the support film was removed from the inorganicpowder dispersed paste layer (I-2). Thereby, the inorganic powderdispersed paste layer (I-2) was transferred and closely bonded to thesurface of the inorganic powder dispersed paste layer (I-1)). When thethickness of the laminate consisting of the inorganic powder dispersedpaste layers (I-1) and (I-2) formed on the glass substrate was measured,it was 20 μm±2 μm.

[Step of Forming Resist Film]

The transfer film (R-1) was placed upon the inorganic powder dispersedpaste layer (I-2) in such a manner that the surface of the resist film(1) came into contact with the surface of the inorganic powder dispersedpaste layer (I-2), and the transfer film (R-1) was press-bonded by aheating roller under the same press-bonding conditions as describedabove. After the above press-bonding treatment, the support film wasremoved from the resist film (1). Thereby, the resist film (1) wastransferred and closely bonded to the surface of the inorganic powderdispersed paste layer (I-2). When the thickness of the resist film (1)transferred to the surface of the inorganic powder dispersed paste layer(I-2) was measured, it was 5 μm±1 μm.

[Step of Exposing Resist Film]

The resist film (1) formed on the laminate of the inorganic powderdispersed paste layers was exposed to an i-line (ultraviolet lighthaving a wavelength of 365 nm) by an ultra high-pressure mercury lampthrough an exposure mask (stripe pattern having a width of 70 μm). Theamount of irradiation was 400 mJ/cm².

[Step of Developing Resist Film]

The exposed resist film (1) was developed with a 0.2 wt % aqueoussolution of potassium hydroxide (25° C.) as a developer by a showermethod for 20 seconds. Then, the resist film was washed with ultra-purewater to remove unexposed uncured resist so as to form a resist pattern.

[Step of Etching Inorganic Powder Dispersed Paste Layer]

Without a break after the above step, etching was carried out with a 0.2wt % aqueous solution of potassium hydroxide (25° C.) as an etchingsolution by a shower method for 2 minutes. Thereafter, washing treatmentwith ultra-pure water and drying treatment were carried out. Thereby, aninorganic powder dispersed paste layer pattern consisting of materiallayer remaining portions and material layer removed portions was formed.

[Step of Baking Inorganic Powder Dispersed Paste Layer]

The glass substrate having the above inorganic powder dispersed pastelayer pattern was baked in a firing furnace at 60° C. for 30 minutes. Apanel material having electrodes formed on the surface of the glasssubstrate was thereby obtained.

When the cross section of the electrode of the obtained panel materialwas observed by a scanning electron microscope to measure the width andheight of the bottom face of the cross section, the width of the bottomface was 50 μm±2 μm and the height was 10 μm±1 μm. Thus, dimensionalaccuracy was very high.

EXAMPLE 2

[Formation of Transfer Film]

A transfer film having a laminate consisting of two inorganic powderdispersed paste layers for forming electrodes and a resist film formedon a support film was prepared by the following operations (1) to (3).(1) A 5 μm-thick resist film [to be referred to as “resist film (1′)”hereinafter] was formed on the support film by coating a PET supportfilm (a width of 200 mm, a length of 30 m and a thickness of 38 μm) thathad been subjected to a release treatment with the resist compositionused in Preparation Example 8 by the use of a roll coater and drying thecoated film at 110° C. for 5 minutes to remove the solvent completely.

(2) A 10 μm-thick inorganic powder dispersed paste layer for formingelectrodes [to be referred to as “inorganic powder dispersed paste layer(I-2′)” hereinafter] was formed on the resist film (1′) by coating theresist film (1′) with the inorganic powder dispersed paste composition(I-2) by the use of a roll coater and drying the coated film at 110° C.for 5 minutes to remove the solvent completely.

(3) A 10 μm-thick inorganic powder dispersed paste layer [to be referredto as “inorganic powder dispersed paste layer (I-1′)” hereinafter] wasformed on the inorganic powder dispersed paste layer (I-2′) by coatingthe inorganic powder dispersed paste layer (I-2′) with the inorganicpowder dispersed paste composition (I-1) by the use of a roll coater anddrying the coated film at 110° C. for 5 minutes to remove the solventcompletely.

[Step of Transferring Laminate Film]

The transfer film was placed upon the same glass substrate as used inExample 1 in such a manner that the surface of the inorganic powderdispersed paste layer (I-1′) came into contact with the surface of theglass substrate, and the transfer film was press-bonded by a heatingroller. Press-bonding conditions are a heating roller surfacetemperature of 120° C., a roll pressure of 4 kg/cm² and a heating rollmoving speed of 0.5 m/min. After the above press-bonding treatment, thesupport film was removed from the laminate film [surface of the resistfilm (1′)]. Thereby, the laminate film was transferred and closelybonded to the surface of the glass substrate. When the thickness of thislaminate film [laminate film consisting of two inorganic powderdispersed paste layers and the resist film] was measured, it was 25 μm±2μm.

[Step of Exposing and Developing Resist Film]

A resist pattern was formed on the laminate of the inorganic powderdispersed paste layers by exposing (to ultraviolet light), developingwith an aqueous solution of potassium hydroxide and washing with waterthe resist film (1′) formed on the laminate of the inorganic powderdispersed paste layers under the same conditions as in Example 1.

[Step of Etching Inorganic Powder Dispersed Paste Layer]

Without a break after the above step, etching with an aqueous solutionof potassium hydroxide, washing with water and drying were carried outunder the same conditions as in Example 1 to form an inorganic powderdispersed paste layer pattern.

[Step of Baking Inorganic Powder Dispersed Paste Layer Pattern]

The glass substrate having an inorganic powder dispersed paste layerpattern was baked in a firing furnace at 600° C. for 30 minutes. A panelmaterial having electrodes formed on the surface of the glass substratewas thereby obtained.

When the cross section of the electrode of the obtained panel materialwas observed by a scanning electron microscope to measure the width andheight of the bottom face of the cross section, the width of the bottomface was 50 μm±2 μm and the height was 10 μm±1 μm. Thus, dimensionalaccuracy was very high.

EXAMPLE 3

[Step of Transferring Inorganic Powder Dispersed Paste Layer]

The transfer film (II-1) was placed upon a glass substrate for a 6-inchpanel, which has been arranged with electrodes (width of 100 μm) forgenerating plasma, in such a manner that the surface of the inorganicpowder dispersed paste layer (II-1) came into contact with the surfaceof the glass substrate, and the transfer film (II-1) was press-bonded bya heating roller. Press-bonding conditions are a heating roller surfacetemperature of 120° C., a roll pressure of 4 kg/cm² and a heating rollmoving speed of 0.5 m/min. After the above press-bonding treatment, thesupport film was removed from the inorganic powder dispersed paste layer(II-1). Thereby, the inorganic powder dispersed paste layer (II-1) wastransferred and closely bonded to the surface of the glass substrate.When the thickness of the inorganic powder dispersed paste layer (II-1)was measured, it was 40 μm±1 μm.

Then, the transfer film (II-2) was placed upon the inorganic powderdispersed paste layer (II-1) in such a manner that the surface of theinorganic powder dispersed paste layer (II-2) came into contact with thesurface of the inorganic powder dispersed paste layer (II-1), and thetransfer film (II-2) was press-bonded by a heating roller under the samepress-bonding conditions as described above. After the abovepress-bonding treatment, the support film was removed from the inorganicpowder dispersed paste layer (II-2). Thereby, the inorganic powderdispersed paste layer (II-2) was transferred and closely bonded to thesurface of the inorganic powder dispersed paste layer (II-1).

When the thickness of the laminate of the inorganic powder dispersedpaste layers (II-1) and (II-2) formed on the glass substrate wasmeasured, it was 80 μm±2 μm.

Thereafter, the transfer film (II-3) was placed upon the inorganicpowder dispersed paste layer (II-2) in such a manner that the surface ofthe inorganic powder dispersed paste layer (II-3) came into contact withthe surface of the inorganic powder dispersed paste layer (II-2), andthe transfer film (II-3) was press-bonded by a heating roller under thesame press-bonding conditions as described above. After the abovepress-bonding treatment, the support film was removed from the inorganicpowder dispersed paste layer (II-3). Thereby, the inorganic powderdispersed paste layer (II-3) was transferred and closely bonded to thesurface of the inorganic powder dispersed paste layer (II-2).

When the thickness of the laminate of the inorganic powder dispersedpaste layers (II-1) to (II-3) formed on the glass substrate wasmeasured, it was 120 μm±3 μm.

Thereafter, the transfer film (II-4) was placed upon the inorganicpowder dispersed paste layer (II-3) in such a manner that the surface ofthe inorganic powder dispersed paste layer (II-4) came into contact withthe surface of the inorganic powder dispersed paste layer (II-3), andthe transfer film (II-4) was press-bonded by a heating roller under thesame press-bonding conditions as described above. After the abovepress-bonding treatment, the support film was removed from the inorganicpowder dispersed paste layer (II-4). Thereby, the inorganic powderdispersed paste layer (II-4) was transferred and closely bonded to thesurface of the inorganic powder dispersed paste layer (II-3).

When the thickness of the laminate of the inorganic powder dispersedpaste layers (II-1) to (II-4) formed on the glass substrate wasmeasured, it was 160 μm±4 μm.

Thereafter, the transfer film (II-5) was placed upon the inorganicpowder dispersed paste layer (II-4) in such a manner that the surface ofthe inorganic powder dispersed paste layer (II-5) came into contact withthe surface of the inorganic powder dispersed paste layer (II-4), andthe transfer film (II-5) was press-bonded by a heating roller under thesame press-bonding conditions as described above. After the abovepress-bonding treatment, the support film was removed from the inorganicpowder dispersed paste layer (II-5). Thereby, the inorganic powderdispersed paste layer (II-5) was transferred and closely bonded to thesurface of the inorganic powder dispersed paste layer (II-4). When thethickness of the laminate of the inorganic powder dispersed paste layers(II-1) to (II-5) formed on the glass substrate was measured, it was 200μm±5 μm.

[Step of Forming Resist Film]

The transfer film (R-2) was placed upon the inorganic powder dispersedpaste layer (II-5) in such a manner that the surface of the resist film(2) came into contact with the surface of the inorganic powder dispersedpaste layer (II-5), and the transfer film (R-2) was press-bonded by aheating roller under the same press-bonding conditions as describedabove. After the above press-bonding treatment, the support film wasremoved from the resist film (2). Thereby, the resist film (2) wastransferred and closely bonded to the surface of the inorganic powderdispersed paste layer (II-5).

When the thickness of the resist film (2) transferred to the surface ofthe inorganic powder dispersed paste layer (II-5) was measured, it was10 μm±1 μm.

[Step of Exposing Resist Film]

The resist film (2) formed on the laminate of the inorganic powderdispersed paste layers was exposed to an i-line (ultraviolet lighthaving a wavelength of 365 nm) by an ultra high-pressure mercury lampthrough an exposure mask (stripe pattern having a width of 50 μm). Theamount of irradiation was 400 mJ/cm².

[Step of Developing Resist Film]

The exposed resist film (2) was developed with a 0.2 wt % aqueoussolution of potassium hydroxide (25° C.) as a developer by a showermethod for 30 seconds. Then, the resist film was washed with ultra-purewater to remove unexposed uncured resist so as to form a resist pattern.

[Step of Etching Inorganic Powder Dispersed Paste Layer]

Without a break after the above step, etching was carried out with a 0.2wt % aqueous solution of potassium hydroxide (25° C.) as an etchingsolution by a shower method for 5 minutes.

Thereafter, washing treatment with ultra-pure water and drying treatmentwere carried out. Thereby, an inorganic powder dispersed paste layerpattern consisting of material layer remaining portions and materiallayer removed portions was formed.

[Step of Baking Inorganic Powder Dispersed Paste Layer]

The glass substrate having the above inorganic powder dispersed pastelayer pattern formed thereon was heated in a clean oven at 180° C. Thisglass substrate was then transferred in a firing furnace and baked at520° C. for 30 minutes. A panel material having barrier ribs (glasssintered body) on the surface of the glass substrate was therebyobtained.

When the cross section of the barrier rib of the obtained panel materialwas observed by a scanning electron microscope to measure the width andheight of the bottom face of the cross section, the width of the bottomface was 50 μm±3 μm and the height was 150 μm±4 μm. Thus, thedimensional accuracy of the barrier rib was very high and the aspectratio was as high as 3.

A plasma display panel was manufactured using this panel material inaccordance with a commonly used method. This plasma display panel hadhigh brightness at fluorescent sites and displayed high-quality colorimages.

EXAMPLE 4

[Formation of Transfer Film]

A transfer film having a laminate film consisting of five inorganicpowder dispersed paste layers and a resist film formed on a support filmwas prepared by the following operations (1) to (6).

(1) A 10 μm-thick resist film [to be referred to as “resist film (2′)”hereinafter] was formed on the support film by coating a PET supportfilm (a width of 200 mm, a length of 30 m and a thickness of 38 μm) thathad been subjected to a release treatment with the resist compositionused in Preparation Example 9 by the use of a roll coater and drying thecoated film at 110° C. for 5 minutes to remove the solvent completely.

(2) A 40 μm-thick inorganic powder dispersed paste layer [to be referredto as “inorganic powder dispersed paste layer (II-5′)” hereinafter] wasformed on the resist film (2′) by coating the resist film (2′) with theinorganic powder dispersed paste composition (II-5) by the use of a rollcoater and drying the coated film at 110° C. for 5 minutes to remove thesolvent completely.

(3) A 40 μm-thick inorganic powder dispersed paste layer [to be referredto as “inorganic powder dispersed paste layer (II-4′)” hereinafter] wasformed on the inorganic powder dispersed paste layer (II-5′) by coatingthe inorganic powder dispersed paste layer (II-5′) with the inorganicpowder dispersed paste composition (II-4) by the use of a roll coaterand drying the coated film at 110° C. for 5 minutes to remove thesolvent completely.

(4) A 40 μm-thick inorganic powder dispersed paste layer [to be referredto as “inorganic powder dispersed paste layer (II-3′)” hereinafter] wasformed on the inorganic powder dispersed paste layer (II-4′) by coatingthe inorganic powder dispersed paste layer (II-4′) with the inorganicpowder dispersed paste composition (II-3) by the use of a roll coaterand drying the coated film at 110° C. for 5 minutes to remove thesolvent completely.

(5) A 40 μm-thick inorganic powder dispersed paste layer [to be referredto as “inorganic powder dispersed paste layer (II-2′)” hereinafter] wasformed on the inorganic powder dispersed paste layer (II-3′) by coatingthe inorganic powder dispersed paste layer (II-3′) with the inorganicpowder dispersed paste composition (II-2) by the use of a roll coaterand drying the coated film at 110° C. for 5 minutes to remove thesolvent completely.

(6) A 40 μm-thick inorganic powder dispersed paste layer [to be referredto as “inorganic powder dispersed paste layer (II-1′)” hereinafter] wasformed on the inorganic powder dispersed paste layer (II-2′) by coatingthe inorganic powder dispersed paste layer (II-2′) with the inorganicpowder dispersed paste composition (II-1) by the use of a roll coaterand drying the coated film at 110° C. for 5 minutes to remove thesolvent completely.

[Step of Transferring Laminate Film]

The transfer film was placed upon the same glass substrate as used inExample 3 in such a manner that the surface of the inorganic powderdispersed paste layer (1′) came into contact with the surface of theglass substrate, and the transfer film was press-bonded by a heatingroller. Press-bonding conditions are a heating roller surfacetemperature of 100° C., a roll pressure of 3 kg/cm² and a heating rollmoving speed of 0.5 m/min. After the above press-bonding treatment, thesupport film was removed from the laminate film [surface of the resistfilm (2′)]. Thereby, the laminate film was transferred and closelybonded to the surface of the glass substrate. When the thickness of thislaminate film [laminate film consisting of five inorganic powderdispersed paste layers and the resist film] was measured, it was 210μm±6 μm.

[Step of Exposing and Developing Resist Film]

A resist pattern was formed on the laminate of the inorganic powderdispersed paste layers by exposing (to ultraviolet light), developingwith an aqueous solution of potassium hydroxide and washing with waterthe resist film (2′) formed on the laminate of the inorganic powderdispersed paste layers under the same conditions as in Example 1.

[Step of Etching Inorganic Powder Dispersed Paste Layers]

Without a break after the above step, an inorganic powder dispersedpaste layer pattern was formed by etching with an aqueous solution ofpotassium hydroxide, washing with water and drying the laminate of theinorganic powder dispersed paste layers under the same conditions as inExample 3.

[Step of Baking Inorganic Powder Dispersed Paste Layer Pattern]

The glass substrate having an inorganic powder dispersed paste layerpattern formed thereon was heated in a clean oven at 180° C. for 30minutes. Thereafter, this glass substrate was transferred in a firingfurnace and baked at 520° C. for 30 minutes to give a panel materialhaving barrier ribs (glass sintered body) formed on the surface of theglass substrate.

When the cross section of the barrier rib of the obtained panel materialwas observed by a scanning electron microscope to measure the width andheight of the bottom face of the cross section, the width of the bottomface was 50 μm±3 μm and the height was 150 μm±4 μm. Thus, thedimensional accuracy of the barrier rib was very high and the aspectratio was as high as 3.

A plasma display panel was manufactured using this panel material inaccordance with a commonly used method. This plasma display panel hadhigh brightness at fluorescent sites and displayed high-quality colorimages.

What is claimed is:
 1. A process for forming electrodes on a substrate,which comprises: (1) transferring a conductive inorganic powderdispersed paste layer supported on a support film to the surface of asubstrate to form a conductive inorganic powder dispersed paste layer onsaid substrate; (2) forming a resist film on said conductive inorganicpowder dispersed paste layer transferred to the surface of saidsubstrate; (3) exposing said resist film to light through a mask to forma latent image of a resist pattern; (4) developing the exposed resistfilm to form a resist pattern; (5) etching exposed portions of saidconductive inorganic powder dispersed paste layer to form a conductiveinorganic powder dispersed paste layer pattern corresponding to saidresist pattern and to remove said resist pattern; and (6) baking saidconductive inorganic powder dispersed paste layer pattern to calcineorganic substance contained therein to form electrodes.
 2. The processof claim 1, wherein said conductive inorganic powder dispersed pastelayer is formed by coating said support film with a paste compositioncomprising (a-1) conductive powder, (b) an alkali-soluble resin and (c)a solvent and drying the coated film to remove pair or all of thesolvent.
 3. The process of claim 1, wherein the formation of said resistfilm in step (2) is carried out by transferring a resist film supportedon a support film to the surface of said conductive inorganic powderdispersed paste layer.
 4. The process of claim 1, wherein saidconductive inorganic powder dispersed paste layer formed on saidsubstrate in step (1) is a laminate of a plurality of said conductiveinorganic powder dispersed paste layers.
 5. The process of claim 1,wherein a single conductive inorganic powder dispersed paste layersupported on said support film is transferred 2 to 10 times in step (1)to form a laminate of 2 to 10 conductive inorganic powder dispersedpaste layers on said substrate.
 6. The process of claim 1, wherein alaminate of 2 to 10 conductive inorganic powder dispersed paste layerssupported on said support film is transferred to the surface of saidsubstrate in step (1) to form a laminate of 2 to 10 conductive inorganicpowder dispersed paste layers on said substrate.
 7. The process of claim1, wherein a reflection reducing film is formed on or under saidconductive inorganic powder dispersed paste layer.
 8. A process forforming electrodes on a substrate for a plasma display panel, whichcomprises: (1) transferring a laminate film, in which a resist film anda conductive inorganic powder dispersed paste layer are laminated andsupported on a support film in this order, to the surface of a substrateto form on said substrate a laminate film in which said conductiveinorganic powder dispersed paste layer and said resist film arelaminated in this order; (2) exposing said resist film to light througha mask to form a latent image of a resist pattern; (3) developing theexposed resist film to form a resist pattern; (4) etching exposedportions of said conductive inorganic powder dispersed paste layer toform a conductive inorganic powder dispersed paste layer patterncorresponding to said resist pattern and to remove said resist pattern;and (5) baking said conductive inorganic powder dispersed paste layerpattern to calcine organic substance contained therein to formelectrodes.
 9. The process of claim 8, wherein said conductive inorganicpowder dispersed paste layer is formed by coating a resist film of asupport film comprising said resist film with a paste compositioncomprising (a-1) conductive powder, (b) an alkali-soluble resin and (c)a solvent and drying the coated film to remove part or all of thesolvent.
 10. The process of claim 8, wherein said resist film in thestep (1) is formed by transferring a resist film supported on a supportfilm to the surface of another support film.
 11. The process of claim 8,wherein said conductive inorganic powder dispersed paste layer of saidlaminate film formed on said substrate in step (1) is a laminate of aplurality of said conductive inorganic powder dispersed paste layers.12. The process of claim 8, wherein said laminate film in step (1) isformed by transferring a single conductive inorganic powder dispersedpaste layer supported on a support film 2 to 10 times to form a laminateof 2 to 10 conductive inorganic powder dispersed paste layers on saidresist film of said substrate comprising said resist film.
 13. Theprocess of claim 8, wherein said laminate film in step (1) is formed bytransferring a laminate of 2 to 10 conductive inorganic powder dispersedpaste layers supported on a support film to a resist film on anothersupport film comprising a resist film to form a laminate of 2 to 10conductive inorganic powder dispersed paste layers on said resist filmof said another support film.
 14. A process for forming an electrode ona substrate, which comprises: (1) transferring a laminate film, in whicha resist film, a conductive powder dispersed paste layer and areflection reducing film are laminated and supported on a support filmin this order, to the surface of a substrate to form on said substratesaid laminate film in which said reflection reducing film, saidconductive powder dispersed paste layer and said resist film arelaminated in this order, said conductive powder dispersed paste layerbeing formed of a paste composition which comprises (a-1) conductivepowder, (b) an alkali-soluble resin and (c) a solvent; (2) exposing saidresist film to light through a mask to form a latent image of a resistpattern; (3) developing the exposed resist film to form a resistpattern; (4) etching exposed portions of said conductive powderdispersed paste layer to form a conductive powder dispersed paste layerpattern corresponding to said resist pattern; and (5) baking saidconductive powder dispersed paste layer pattern to calcine organicsubstance contained therein to form an electrode.